Abstract In this article, the generalized model for photothermal wave under dual-phase-lag model is utilized to compute the increment of temperature, the components of displacement, the carrier density and the stress components in a two-dimension semiconducting media. By using Fourier and Laplace transformations with the eigenvalue techniques methodology, the exact solutions of all physical quantities are obtained. A semiconductor media such as silicon has been studied. Finally, the outcomes are represented graphically to display the difference among the models of classical dynamical coupled, the Lord and Shulman and the dual phase lag.

中文翻译：

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二维半导体介质中光热弹性波的双相滞后模型

摘要 本文利用双相滞后模型下的光热波广义模型计算二维半导体介质中的温度增量、位移分量、载流子密度和应力分量。通过使用带有特征值技术方法的傅立叶和拉普拉斯变换，可以获得所有物理量的精确解。已经研究了诸如硅的半导体介质。最后，结果以图形方式表示，以显示经典动力耦合模型、Lord 和 Shulman 模型以及双相位滞后模型之间的差异。