Abstract

Recent experimental and theoretical data on modification of the atomic and electronic structures of the surface of different III–V semiconductors by electrolyte solutions are reviewed. The interrelation between chemical reactions occurring at semiconductor/electrolyte interfaces, the charge transfer between the semiconductor and the solution, and corresponding modifications of the atomic and electronic structures of the semiconductor surface is established. Examples of modification of the electronic characteristics and properties of semiconductor devices and nanostructures under interaction with electrolyte solutions are given.

中文翻译：

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与电解质溶液的界面处III-V半导体表面的原子和电子结构的修饰（综述）

摘要

综述了有关通过电解质溶液修饰不同IIIV半导体表面的原子和电子结构的最新实验和理论数据。建立在半导体/电解质界面发生的化学反应，半导体与溶液之间的电荷转移以及半导体表面的原子和电子结构的相应修饰之间的相互关系。给出了在与电解质溶液相互作用下半导体器件和纳米结构的电子特性和性能的改变的实例。