Abstract

A model of a heterostructure consisting of a silicon-carbide single layer formed on a massive silicon substrate is proposed. The problem of the adsorption of alkali metal atoms and halogen atoms on the carbon and silicon surface atoms of a 2D SiC/Si heterostructure is considered. Analytical estimates for charge transfer and the adsorption energy are reported.

中文翻译：

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2D SiC / Si结构：电子态和吸附性

摘要

提出了由块状硅衬底上形成的碳化硅单层组成的异质结构模型。考虑了二维SiC / Si异质结构的碳和硅表面原子上的碱金属原子和卤素原子的吸附问题。报告了电荷转移和吸附能的分析估计。