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AlGaInSbAs Solid Solutions Grown on InAs Substrates by Zone Recrystallization with a Temperature Gradient
Semiconductors ( IF 0.6 ) Pub Date : 2020-06-30 , DOI: 10.1134/s1063782620070088
L. S. Lunin , M. L. Lunina , D. L. Alfimova , A. S. Pashchenko , O. S. Pashchenko , N. M. Bogatov

Abstract

The growth of AlGaInSbAs solid solutions on InAs substrates from the liquid phase in a temperature-gradient field is discussed. The calculation of parameters is performed, and the luminescence properties and spectral characteristics of AlGaInSbAs solid solutions isoperiodic to InAs substrates are investigated. The heterophase equilibria in the Al–Ga–In–Sb–As system are analyzed in the scope of the model of regular solutions. Regions of thermodynamic stability to the spinodal decomposition of AlGaInSbAs solid solutions and isoperiodicity ranges to the InAs substrate are revealed.



中文翻译:

通过温度梯度区域重结晶在InAs衬底上生长的AlGaInSbAs固溶体

摘要

讨论了AlGaInSbAs固溶体在InAs衬底上从液相在温度梯度场中的生长。进行参数计算,研究了AlGaInSbAs固溶体与InAs衬底等渗的发光性质和光谱特性。在常规溶液模型的范围内分析了Al-Ga-In-Sb-As系统中的异相平衡。揭示了AlGaInSbAs固溶体的旋节线分解的热力学稳定性区域和InAs衬底的等规度范围。

更新日期:2020-06-30
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