Nanoscale vacuum channel transistors (NVCTs) are promising candidates in electronics due to their high frequency, fast response and high reliability, and have attracted considerable attention for structural design and optimization. However, conventional modeling for vacuum devices tends to focus on the work function or electric field distribution for an individual structure. Therefore, it is desirable for a new simulation method to explore the function circuits of NVCTs, e.g. high-speed logic circuits. In this study, a complete simulation of the fabrication, structure design and circuit simulation of NVCTs is demonstrated. First, the fabrication process was designed to be compatible with current semiconductor technology. Then, the “fabricated” structure was directly employed to investigate the influence of the structure parameters on the electrical performance. Furthermore, we explore the possibility of implementing an invert circuit with a single optimal NVCT. To the best of our knowledge, this is the first demonstration of a vacuum-state invertor with a circuit-simulation module in which NVCT functions as a conventional triode or FET. These simulation results illustrate the feasibility of integrating NVCTs into functional circuits and provide a theoretical method for future on-chip vacuum transistors applied in logic or radio-frequency (RF) devices.

中文翻译：

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纳米级真空沟道晶体管的设计与电路仿真

纳米级真空沟道晶体管 (NVCT) 因其高频、快速响应和高可靠性而成为电子产品中很有前途的候选者，并在结构设计和优化方面引起了相当大的关注。然而，真空器件的传统建模往往侧重于单个结构的功函数或电场分布。因此，需要一种新的仿真方法来探索 NVCT 的功能电路，例如高速逻辑电路。在这项研究中，展示了 NVCT 的制造、结构设计和电路模拟的完整模拟。首先，制造工艺被设计为与当前的半导体技术兼容。然后，直接采用“预制”结构来研究结构参数对电性能的影响。此外，我们探讨了实现具有单个最佳 NVCT 的反相电路的可能性。据我们所知，这是首次展示带有电路仿真模块的真空状态逆变器，其中 NVCT 用作传统的三极管或 FET。