Abstract We review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton–phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 µm in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.

中文翻译：

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用于激子学、纳米光子学和量子技术的氮化硼

摘要 我们回顾了氮化硼块状晶体及其外延层在各个领域的物理和应用的最新进展。首先，我们从光电方面强调其重要性，对于在深紫外线下操作的简单设备，鉴于卫生应用。重点将放在这种间接带隙半导体中激子 - 声子耦合异常强的效率上。其次，我们转向纳米光子学，用于管理超放大和医学成像。在这里，利用电磁场与其一些声子的有效耦合，这些声子在真空中与 12 和 6 µm 的光相互作用。第三，我们介绍了目前正在研究的不同缺陷，因为它们倾向于表现为单光子发射器，