Abstract The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 107 A/W and a fast response time of 90 µs were obtained. The specific detectivity D* was measured to be 1.46 ⨯ 1013 Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.

中文翻译：

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通过操纵光门控效应，石墨烯/绝缘体上硅混合结构中的超灵敏和快速光响应

摘要 近年来，基于光门控效应的石墨烯与半导体材料的混合结构由于超高的响应率而引起了广泛的兴趣。然而，响应时间（或增益）的增加是以响应时间为代价的。在本文中，我们设计了一种机制，可以通过操纵光选通效应 (MPE) 同时获得增强的响应度和快速的响应时间。这个概念是通过使用石墨烯/绝缘体上硅 (GSOI) 混合结构来证明的。获得了超过 107 A/W 的超高响应度和 90 µs 的快速响应时间。在 532 nm 波长下测得的比检测率 D* 为 1.46 ⨯ 1013 琼斯。进行了 Silvaco TCAD 建模来解释操纵效果，实验中具有不同石墨烯掺杂水平的 GSOI 器件进一步验证了这一点。所提出的机制为调节载流子分布和传输提供了极好的指导，代表了提高石墨烯/半导体混合光电探测器性能的新途径。