In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that has built-in mask circuits to selectively capture either edge-detection images or normal 8-bit images for low-power computer vision applications. To detect the edges of images in the CIS, neighboring column data are compared in in-column memories after column-parallel analog-to-digital conversion with the proposed mask. The proposed built-in mask circuits are implemented in the CIS without a complex image signal processer to obtain edge images with high speed and low power consumption. According to the measurement results, edge images were successfully obtained with a maximum frame rate of 60 fps. A prototype sensor with 1920 × 1440 resolution was fabricated with a 90-nm 1-poly 5-metal CIS process. The area of the 4-shared 4T-active pixel sensor was 1.4 × 1.4 µm², and the chip size was 5.15 × 5.15 mm². The total power consumption was 9.4 mW at 60 fps with supply voltages of 3.3 V (analog), 2.8 V (pixel), and 1.2 V (digital).

中文翻译：

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具有内置掩膜电路的边缘检测CMOS图像传感器的设计。

在本文中，我们提出了一种互补的金属氧化物半导体（CMOS）图像传感器（CIS），该传感器具有内置的掩膜电路，可以选择性地捕获边缘检测图像或正常的8位图像，以用于低功率计算机视觉应用。为了检测CIS中图像的边缘，在列并行模数转换后，将列中的相邻列数据在列内存储器中进行比较，并提出了掩膜。所提出的内置掩膜电路可在CIS中实现，而无需复杂的图像信号处理器，即可获得具有高速和低功耗的边缘图像。根据测量结果，以60 fps的最大帧速率成功获取了边缘图像。分辨率为1920×1440的原型传感器是通过90 nm 1-poly 5金属CIS工艺制成的。²，芯片尺寸为5.15×5.15 mm ²。60 fps时的总功耗为9.4 mW，电源电压为3.3 V（模拟），2.8 V（像素）和1.2 V（数字）。