Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5 mm average diameter. Optical characteristics (photoluminescence and infrared (IR) absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 7‐MeV electrons. The photoluminescence (PL) spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 1.2·10¹⁶ cm⁻², mainly for NHC stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis.

中文翻译：

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配体稳定的纳米硅：高能电子束对发光性能的影响

通过自下而上的化学方法合成了具有氮杂环卡宾（NHC）和丁基作为稳定配体的硅纳米粉。透射电子显微镜（TEM）用于获得平均直径为1.8-2.5 mm的纳米粒度分布。研究了样品的光学特性（光致发光和红外（IR）吸收光谱），这些样品是在高能7-MeV电子辐照的不同阶段进行制备的。两种情况下的光致发光（PL）光谱变化略有不同，但通常可以看到，随着通量增长到1.2·10 ¹⁶ cm ^-2，发光幅度减小，主要用于NHC稳定的纳米硅。通过PL和IR光谱分析的联合使用，讨论了辐射诱发的纳米硅样品光学性能变化的主要机理。