The results of the theoretical and experimental investigations of optical response of the acceptor centers in narrow GaAs/AlGaAs quantum wells in the infrared spectral range are presented. In the theoretical part, we focused on the probabilities of the photoionization of acceptor centers taking into account the complicated valence band structure and intermixing the light and heavy hole states. We used the finite-difference method to quantize the Luttinger-Kohn Hamiltonian and the decomposition of the impurity potential over the eigenstates of this Hamiltonian with the quantum well profile to obtain the acceptor state energies and wavefunctions in momentum space. The momentum-dependent decomposition coefficients were used to calculate the optical matrix elements of the hole transitions from localized acceptor states to 2D continuum states in dipole approximation. Calculated spectral and polarization dependencies of the infrared optical absorption due to photoionization of acceptors are discussed. Equilibrium absorption spectra of the polarized infrared radiation were measured in a wide temperature range. Spectral positions of the observed absorption peaks are in satisfactory agreement with theoretical calculations.

给出了在狭窄的GaAs / AlGaAs量子阱中红外光谱范围内受主中心光学响应的​​理论和实验研究结果。在理论部分，我们考虑到了复杂的价带结构以及轻，重空穴状态的混合，重点研究了受体中心的光电离的可能性。我们使用有限差分方法对Luttinger-Kohn哈密顿量以及该哈密顿量本征态上的杂质势的量子阱分布进行量化，以获得动量空间中的受主态能和波函数。势头-依赖分解系数用于计算偶极近似中从局域受主态到二维连续体态的空穴跃迁的光学矩阵元素。讨论了由于受体光电离引起的红外光吸收的光谱和偏振依赖性。在较宽的温度范围内测量了偏振红外辐射的平衡吸收光谱。观察到的吸收峰的光谱位置与理论计算令人满意。