GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 10¹¹ Jones at 850 nm light irradiation at room temperature was demonstrated.

中文翻译：

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基于p-GeTe / n-Si异质结的红外光伏探测器。

GeTe是一种重要的窄带隙半导体材料，已在相变存储以及自旋电子器件领域得到应用。然而，尚未对其在室温下工作的红外光电探测器领域中的应用进行研究。本文中，通过磁控溅射技术生长了GeTe纳米膜，并对其特性进行了研究，以研究其物理，电学和光学性质。展示了一种基于GeTe / Si异质结的高性能红外光电探测器，该探测器在室温下850 nm的光下探测率为8×10 ¹¹ Jones。