Abstract The adjustability of the incorporation and distribution of P dopants in Si materials has led to their application in various electronic and photovoltaic devices. In particular, P-doped Si films have been investigated for dopant-induced phenomena such as oxidation enhancement and dopant segregation during thermal oxidation. Despite their technical as well as scientific importance of dopant behaviors in P-doped Si films, these were hardly observed due to low P incorporation. In this study, we prepared and oxidized P-doped epitaxial Si (Si:P) films grown on the Si(100) substrate using in-situ P-doped deposition technique to incorporate high P concentration up to 9.6% (4.8 × 1021 cm−3) in the films, exceeding solid solubility limits (∼3 × 1020 cm−3). We found that in oxidized samples with P concentration greater than 6.2%, defects were generated in the near-surface region of Si:P layers and segregated P was observed at the defected areas. The chemical bonding states of P at the oxidized Si:P film increased in the P 2p peak intensity at the interface between the oxide and the Si:P layer, indicating P segregation at this interface. In the strain states of Si:P films, the decrease in the out-of-plane lattice parameter was observed, while maintaining the constant in-plane lattice parameter, implying strain release due to decreased P concentration in the Si:P layer after dry oxidation.

中文翻译：

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掺杂浓度对干氧化过程中原位掺磷外延硅薄膜微观结构和应变状态的影响

摘要 Si 材料中 P 掺杂剂的掺入和分布的可调性使其在各种电子和光伏器件中得到应用。特别是，已经研究了 P 掺杂的 Si 膜的掺杂诱导现象，例如热氧化过程中的氧化增强和掺杂分离。尽管它们在 P 掺杂的 Si 薄膜中掺杂行为的技术和科学重要性，但由于 P 掺入量低，这些几乎没有被观察到。在这项研究中，我们使用原位 P 掺杂沉积技术制备和氧化生长在 Si(100) 衬底上的 P 掺杂外延 Si (Si:P) 薄膜，以结合高达 9.6% (4.8 × 1021 cm -3) 在薄膜中，超过固溶度极限 (~3 × 1020 cm-3)。我们发现在 P 浓度大于 6.2% 的氧化样品中，在 Si:P 层的近表面区域产生缺陷，在缺陷区域观察到偏析的 P。氧化的 Si:P 膜上 P 的化学键合状态在氧化物和 Si:P 层之间的界面处的 P 2p 峰强度增加，表明该界面处的 P 偏析。在 Si:P 薄膜的应变状态下，观察到面外晶格参数降低，同时保持面内晶格参数不变，这意味着干燥后 Si:P 层中 P 浓度降低导致应变释放氧化。表示在该界面处有 P 偏析。在 Si:P 薄膜的应变状态下，观察到面外晶格参数降低，同时保持面内晶格参数不变，这意味着干燥后 Si:P 层中 P 浓度降低导致应变释放氧化。表示在该界面处有 P 偏析。在 Si:P 薄膜的应变状态下，观察到面外晶格参数降低，同时保持面内晶格参数不变，这意味着干燥后 Si:P 层中 P 浓度降低导致应变释放氧化。