Abstract Silicon/silicon dioxide (Si/SiO2) superlattice microdisk (SLMD) array solar cell structures were fabricated by a photolithography process. An open-circuit voltage of 661 mV was obtained from a Si/SiO2 SLMD array solar cell using a superlattice composed of 5.6-nm-thick Si layers and 2.5-nm-thick SiO2 layers. This open-circuit voltage is significantly higher than that of polycrystalline silicon microdisk solar cells. We also investigated the quantum efficiency and the temperature dependence of the open-circuit voltage. Detailed analysis suggests that the bandgap of the Si/SiO2 superlattice is approximately 1.4 eV, which is larger than that of c-Si.

中文翻译：

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Si/SiO2超晶格微盘阵列太阳能电池结构中的光伏效应

摘要 硅/二氧化硅 (Si/SiO2) 超晶格微盘 (SLMD) 阵列太阳能电池结构是通过光刻工艺制造的。使用由 5.6 nm 厚的 Si 层和 2.5 nm 厚的 SiO2 层组成的超晶格从 Si/SiO2 SLMD 阵列太阳能电池获得 661 mV 的开路电压。这种开路电压明显高于多晶硅微盘太阳能电池。我们还研究了开路电压的量子效率和温度依赖性。详细分析表明，Si/SiO2 超晶格的带隙约为 1.4 eV，大于 c-Si。