Abstract (In0.5Nb0.5)xTi1-xO12 (INTO) ceramics exhibit the unusual dielectric properties of giant dielectric constant and good stabilities, but their low-frequency dielectric loss is relatively large, and the sintering temperature is too high, which are very disadvantageous for practical applications. According to internal barrier layer capacitance effect, which seems to be the most plausible mechanism of the unusual dielectric properties, constructing insulating phase boundaries in INTO ceramics is an effective way to reduce their low-frequency dielectric loss. In this paper, SiO2 was added to INTO ceramics, because, on the one hand, the insulating phase boundaries could be constructed by SiO2, on the other hand, SiO2 could play the role of sintering agent to reduce the sintering temperature. Therefore, the SiO2/INTO ceramics were prepared by solid-state reaction, and their crystalline structures, microstructures, and electrical properties were analyzed. Compared to previous reports, the low-frequency dielectric loss of SiO2/INTO ceramics after annealing, which were sintered at a lower temperature of 1300 °C for a shorter time of 5 h, decreases substantially. The reason was discussed.

中文翻译：

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添加SiO2对(In0.5Nb0.5)0.05Ti0.95O2陶瓷微观结构和介电性能的影响

摘要 (In0.5Nb0.5)xTi1-xO12(INTO)陶瓷表现出巨介电常数和良好的稳定性等不同寻常的介电性能，但其低频介电损耗较大，烧结温度过高，对不利于实际应用。根据内部阻挡层电容效应，这似乎是异常介电特性的最合理机制，在 INTO 陶瓷中构建绝缘相界是降低其低频介电损耗的有效方法。本文在INTO陶瓷中加入SiO2，一方面可以通过SiO2构建绝缘相界，另一方面SiO2可以起到烧结剂的作用，降低烧结温度。所以，采用固相反应制备SiO2/INTO陶瓷，对其晶体结构、微观结构和电学性能进行了分析。与之前的报道相比，在 1300°C 的较低温度下烧结 5 小时的较短时间的 SiO2/INTO 陶瓷在退火后的低频介电损耗显着降低。原因进行了讨论。