A photo detector was fabricated based on ZnO nanorods (NRs) on silicon substrate. The ZnO nanostructures were synthesized via hydrothermal method. The structure, morphology, and optical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and UV–Visible spectrophotometer. XRD result, shows that the ZnO NRs is a hexagonal Wurtzite structure with preferred orientation (002) along the c-axis and the SEM photographs illustrate the average diameter and length of the ZnO nanorods were around 400 nm and 4 μm, respectively. The detector measurements revealed that the current–voltage characteristics of the ZnO NRs are asymmetrical, showing rectifying, diode-like behavior and the asymmetry factors (I d /I ph ) about 13 at 5 V bias voltage was obtained. It was found that the, current under illumination was almost much higher compared with the dark current at − 5 V. The ZnO nanorods seem to be promising materials for high responsivity photo detector about 0.25 A/W and 0.29 A/W at 390 nm by applying a bias voltage of 0.5 V and 1 V respectively, with maximum quantum efficiencies of ZnO NRs 79% and 92% at the same bias voltage, which provides a route to fabricate a good UV photo detector.

中文翻译：

---

硅衬底上基于 ZnO 纳米结构的光电探测器制造

基于硅衬底上的 ZnO 纳米棒 (NRs) 制造了光电探测器。ZnO纳米结构是通过水热法合成的。通过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM) 和紫外-可见分光光度计对结构、形貌和光学性质进行了表征。XRD 结果表明，ZnO NRs 是六方纤锌矿结构，沿 c 轴具有择优取向（002），SEM 照片表明 ZnO 纳米棒的平均直径和长度分别约为 400 nm 和 4 μm。检测器测量表明，ZnO NRs 的电流-电压特性是不对称的，显示出类似二极管的整流行为，并且在 5 V 偏置电压下获得了约 13 的不对称因子（I d /I ph ）。结果发现，