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Electrical Transport Properties of Vanadium‐Doped Bi2Te2.4Se0.6
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-06-26 , DOI: 10.1002/pssb.202000088 Christian Riha 1 , Birkan Düzel 1 , Karl Graser 1 , Olivio Chiatti 1 , Evangelos Golias 2 , Jaime Sánchez-Barriga 2 , Oliver Rader 2 , Oleg E. Tereshchenko 3 , Saskia F. Fischer 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-06-26 , DOI: 10.1002/pssb.202000088 Christian Riha 1 , Birkan Düzel 1 , Karl Graser 1 , Olivio Chiatti 1 , Evangelos Golias 2 , Jaime Sánchez-Barriga 2 , Oliver Rader 2 , Oleg E. Tereshchenko 3 , Saskia F. Fischer 1
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Vanadium‐doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle‐resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van‐der‐Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase‐coherence lengths of up to 250 nm for x = 0.015.
中文翻译：
钒掺杂的Bi2Te2.4Se0.6的电输运性质
通过Bridgman方法生长了钒掺杂的Bi 2 - x Te 2.4 Se 0.6单晶，x = 0.015和0.03。通过角度分辨光发射光谱（ARPES）测量进行的能带结构表征显示了两种钒浓度的无间隙拓扑表面状态。范德堡电阻率，霍尔电荷载流子密度以及在0.3至300 K的温度范围内的迁移率在很大程度上取决于钒的浓度，载流子密度低至1.5×10 16 cm -3且迁移率高为570 cm 2 V -1 s -1。正如在无间隙拓扑表面态中的传输所预期的那样，电阻率，载流子密度和迁移率在10 K以下恒定不变。对于在相同温度范围内的两种钒浓度，磁阻均显示出较弱的抗局域性。使用Hikami–Larkin–Nagaoka模型分析了较弱的反局部化，对于x = 0.015 ，该模型可产生高达250 nm的相干长度。
更新日期：2020-06-26
中文翻译：
钒掺杂的Bi2Te2.4Se0.6的电输运性质
通过Bridgman方法生长了钒掺杂的Bi 2 - x Te 2.4 Se 0.6单晶，x = 0.015和0.03。通过角度分辨光发射光谱（ARPES）测量进行的能带结构表征显示了两种钒浓度的无间隙拓扑表面状态。范德堡电阻率，霍尔电荷载流子密度以及在0.3至300 K的温度范围内的迁移率在很大程度上取决于钒的浓度，载流子密度低至1.5×10 16 cm -3且迁移率高为570 cm 2 V -1 s -1。正如在无间隙拓扑表面态中的传输所预期的那样，电阻率，载流子密度和迁移率在10 K以下恒定不变。对于在相同温度范围内的两种钒浓度，磁阻均显示出较弱的抗局域性。使用Hikami–Larkin–Nagaoka模型分析了较弱的反局部化，对于x = 0.015 ，该模型可产生高达250 nm的相干长度。
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