In Situ Positron Annihilation Spectroscopy Analysis on Low‐Temperature Irradiated Semiconductors, Challenges and Possibilities,Physica Status Solidi (A) - Applications and Materials Science

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In Situ Positron Annihilation Spectroscopy Analysis on Low‐Temperature Irradiated Semiconductors, Challenges and Possibilities
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-06-26 , DOI: 10.1002/pssa.202000232
Jonatan Slotte _{1,

2} , Simo Kilpeläinen ₁ , Natalie Segercrantz ₁ , Kenichiro Mizohata ₂ , Jyrki Räisänen ₂ , Filip Tuomisto _{1,

2}

Affiliation

A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10–300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues.

中文翻译：

低温辐照半导体的原位正电子An没光谱分析，挑战和可能性

赫尔辛基大学加速器实验室的独特实验装置可对离子辐照样品进行原位正电子an没光谱（PAS）分析。此外，该系统还可以在辐照过程中和随后的正电子hil灭测量中对样品进行温度控制（10–300 K）。使用这样的系统进行缺陷识别和退火研究会带来很多详尽的研究可能性。但是，该系统还对这些可能性提出了一些限制和挑战，这些可能性与辐射和PAS分析有关。这篇评论试图解决这些问题。

更新日期：2020-06-26

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