Abstract Special thermal conductivity bridging is conducted between metal matrix and graphene oxide (GO) with covalent bond (Cu-O-Si-O-C) from γ-glycidylether propyl trimethylsilane (GPTS) to decrease thermal resistance and weaken phonon scattering through interface. The implementation of this bridging process involves a pulsed electrophoretic deposition, in which the GPTS modified GO as thermal conductivity reinforcing material was deposited onto the Cu-Zn alloy. The composite morphology and interfacial structure by field emission environment scanning electron microscope shows that the GPTS-GO is uniformly deposited on the substrate surface, and there is no interlayer of the GPTS-GO/Cu differing from the GO/Cu without GPTS. Raman spectrum reveals the bonding of Cu-O-Si and Si-O-C to prove the bridging role of GPTS by structural defects of the graphene and the changes of relative characteristic peaks before and after modification, as well as the Fourier transform infrared spectrum results confirming the Cu-O-Si-O-C covalent bonds. Compared to the thermal stability and thermal conductivity by thermogravimetric analyzer from room temperature to a higher temperature of 150 °C for the GO/Cu sample without GPTS, the GPTS-GO/Cu exhibits significantly improved performances. The thermal conductivity achieves 415.2 and 361.9 W/mK at 50 °C to 150 °C, which is 5.01% and 6.00% higher than that of the GO/Cu, The thermal diffusion coefficient achieves 1.236 and 1.087 cm2/s at 50 °C to 150 °C, respectively.

中文翻译：

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通过脉冲电沉积在功能化石墨烯上共价桥接铜锌合金增强热导界面

摘要 γ-缩水甘油醚丙基三甲基硅烷（GPTS）通过共价键（Cu-O-Si-OC）在金属基体和氧化石墨烯（GO）之间进行特殊的导热桥接，以降低热阻并减弱通过界面的声子散射。这种桥接过程的实施涉及脉冲电泳沉积，其中 GPTS 改性的 GO 作为导热增强材料沉积在 Cu-Zn 合金上。场发射环境扫描电镜复合形貌和界面结构表明，GPTS-GO均匀沉积在基板表面，GPTS-GO/Cu没有与没有GPTS的GO/Cu不同的夹层。拉曼光谱揭示了Cu-O-Si和Si-OC的键合，证明了GPTS通过石墨烯的结构缺陷和改性前后相关特征峰的变化的桥接作用，以及傅里叶变换红外光谱结果证实Cu-O-Si-OC 共价键。与热重分析仪从室温到 150°C 的高温下，没有 GPTS 的 GO/Cu 样品的热稳定性和热导率相比，GPTS-GO/Cu 表现出显着改善的性能。导热系数在50°C至150°C下达到415.2和361.9 W/mK，比GO/Cu高5.01%和6.00%，热扩散系数在50°C下达到1.236和1.087 cm2/s分别为 150 °C。