The sputter yield and discharge voltage of fourteen target materials (Al, Cr, Cu, Mg, Mo, Nb, Pb, Ta, Ti, V, W, Y, Zn, and Zr) have been measured during reactive sputtering in argon/oxygen mixtures. The obtained oxide sputter yields strongly differ from the published data based on ion beam experiments. A second observation is that based on the discharge voltage behavior observed during target oxidation, the materials can be subdivided into two groups. For the first group, the discharge voltage increases on the target oxidation, while for the second group the opposite behavior is observed. Both observations are explained based on a model that accounts for oxygen implantation into the target, preferential oxygen sputtering, and additional oxygen loss mechanisms such as outdiffusion. The difference between both groups can be explained from the oxygen fraction in the gas discharge required to fully oxidize the target surface. This required fraction is lower for the first group, and higher for the second group, than the oxygen fraction when the reactive sputter process switches into poisoned mode. The required fraction is mainly defined by the oxide sputter yield. The lower sputter yield as compared to literature values can be attributed to implanted oxygen that dilutes the formed oxide and/or continuously replaces sputtered oxygen.

在氩气/氧气中进行反应溅射时，已测量了14种目标材料（Al，Cr，Cu，Mg，Mo，Nb，Pb，Ta，Ti，V，W，Y，Zn和Zr）的溅射产率和放电电压混合物。所获得的氧化物溅射产率与基于离子束实验的公开数据有很大差异。第二个观察结果是，根据目标氧化过程中观察到的放电电压行为，可以将材料分为两组。对于第一组，放电电压随着目标氧化而增加，而对于第二组，观察到相反的行为。基于一个模型解释了这两个观察结果，该模型考虑了向目标中注入氧气，优先进行氧气溅射以及其他氧气损失机制（例如扩散）的问题。两组之间的差异可以通过完全氧化目标表面所需的气体放电中的氧气含量来解释。当反应性溅射工艺切换到中毒模式时，第一组所需的分数比氧气组低，第二组更高。所需的分数主要由氧化物溅射产率定义。与文献值相比，较低的溅射产率可归因于注入的氧气稀释了形成的氧化物和/或连续替换了溅射的氧气。所需的分数主要由氧化物溅射产率定义。与文献值相比，较低的溅射产率可归因于注入的氧气稀释了形成的氧化物和/或连续替换了溅射的氧气。所需的分数主要由氧化物溅射产率定义。与文献值相比，较低的溅射产率可归因于注入的氧气稀释了形成的氧化物和/或连续替换了溅射的氧气。