Abstract The proposed article presents optimized Indium doped ZnO thin film for acetylene gas sensor. Thin films of ZnO and Indium doped ZnO of thickness 100 nm were successfully deposited on glass substrate using resistive thermal evaporation method. Structural properties have been performed by using XRD which reveals polycrystalline nature of the thin films. Morphological studies have been performed by using FESEM which reveals the information that thin film is homogeneous and uniform. AFM showed that with the increasing of indium doping concentration in ZnO resulting increment in vertical roughness of thin films. Further sample were tested for acetylene gas sensing using Keithley source meter and multimeter. The fabricated sensor (IZO-3) showed high sensitivity magnitude of 29.06 (100 ppm), short response and recovery time of 49.28 s and 58.45 s respectively at 150 °C operating temperature. IZO-3 sensor showed good linearity with good selectivity and excellent reproducibility.

中文翻译：

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用于高灵敏度乙炔 (C2H2) 气体传感的铟掺杂 ZnO 薄膜的开发

摘要 本文提出了优化的用于乙炔气体传感器的铟掺杂氧化锌薄膜。使用电阻热蒸发方法成功地将厚度为 100 nm 的 ZnO 和掺铟 ZnO 薄膜沉积在玻璃基板上。结构特性已通过使用 XRD 进行，该 XRD 揭示了薄膜的多晶性质。使用 FESEM 进行了形态学研究，揭示了薄膜均匀一致的信息。AFM 表明随着 ZnO 中铟掺杂浓度的增加，薄膜的垂直粗糙度增加。使用 Keithley 源表和万用表测试了更多样品的乙炔气体传感。制造的传感器 (IZO-3) 显示出 29.06 (100 ppm) 的高灵敏度、49.28 秒和 58 秒的短响应和恢复时间。在 150 °C 工作温度下分别为 45 秒。IZO-3 传感器显示出良好的线性、良好的选择性和出色的重现性。