Abstract Green electroluminescence (EL) at 548 nm is obtained from the silicon-based metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on the Al2O3/Ho2O3 nanolaminate films fabricated by atomic layer deposition. The emerald green EL from Ho3+ ions presents a maximum power density of 0.2 mW/cm2, and the excitation cross section up to 4.8 × 10−16 cm2, which is attributed to the impact excitation of the Ho3+ ions by hot electrons in Al2O3 matrix via Poole–Frenkel mechanism. The critical distance for cross relaxation between Ho2O3 dopant layers is ~3.0 nm, concerning both the EL intensities and the lifetime characterizations, which is consistent with previous reports. The difference resulting in the lower excitation efficiency from these Al2O3/Ho2O3 MOSLEDs is speculated to originate from the non-radiative cross-relaxation within the Ho3+ ions due to the abundant energy levels between the excited and ground states.

中文翻译：

---

硅上原子层沉积制备的 Al2O3/Ho2O3 纳米层压薄膜的绿色电致发光探索

摘要 548 nm 的绿色电致发光 (EL) 是从基于通过原子层沉积制备的 Al2O3/Ho2O3 纳米层压薄膜的硅基金属氧化物半导体发光器件 (MOSLED) 中获得的。Ho3+ 离子的翠绿色 EL 的最大功率密度为 0.2 mW/cm2，激发截面高达 4.8 × 10−16 cm2，这归因于 Al2O3 基体中的热电子对 Ho3+ 离子的撞击激发普尔-弗伦克尔机制。Ho2O3 掺杂剂层之间交叉弛豫的临界距离约为 3.0 nm，涉及 EL 强度和寿命特征，这与之前的报告一致。