Abstract An in situ O+ beam method for preparing mid-infrared sensitive polycrystalline lead selenide thin films has been demonstrated. By interaction with low energy ion beam, the optical band gap of the material can be adjusted to the extent that it is more suitable for absorption and detection of mid-infrared photons. The structural properties and the Urbach energy as low as 1.1 meV both suggest a well-ordered microstructure with high crystallinity. The preliminary optoelectronic measurements suggest its mid-IR sensitivity and a comparable responsivity of 0.62 A/W at 3.0 μm. Unlike the traditional thermal diffusion, this method therefore provides a rapid material sensitization and only requires a low temperature annealing without oxygen or iodine. This method may provide a new low-cost and easy-processing approach to fabricate mid-IR photosensitive lead chalcogenides.

中文翻译：

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通过原位氧离子束诱导激活多晶 PbSe 中的光敏性

摘要 已经证明了一种用于制备中红外敏感多晶硒化铅薄膜的原位 O+ 束方法。通过与低能离子束相互作用，可以调节材料的光学带隙，使其更适合中红外光子的吸收和检测。结构特性和低至 1.1 meV 的 Urbach 能量都表明具有高结晶度的有序微观结构。初步的光电测量表明它的中红外灵敏度和在 3.0 μm 处的响应率为 0.62 A/W。与传统的热扩散不同，该方法因此提供了快速的材料敏化，并且只需要在没有氧气或碘的情况下进行低温退火。