This paper presents, the design and simulation of RF MEMS shunt capacitive switch. The electromechanical and electromagnetic analysis of the switch has been done using COMSOL(FEM) and HFSS tools. The proposed switch has the design with non-uniform meanders and dielectric material Silicon Nitrate (Si₃N₄). Different beam materials such as Gold, Aluminum, and Platinum are used to design the switch and analyze it. In the electro mechanical analysis of the switch, the pull-in voltage obtained for the beam material Platinum is 10.56 V for a gap (between the beam and signal-line dielectric) of 2.5 µm which is effective in comparison to the other materials like Gold and Aluminum. As far as the RF performance analysis is concerned, the isolation, insertion loss and return loss have been calculated. The isolation, return loss and insertion loss are − 25 dB, − 14.3 dB and − 0.33 dB respectively. On performing the stress analysis of the switch, a stress value of 0.05 N/m² has been obtained for the applied pull-in voltage. The proposed switch is used for C band applications.

本文介绍了射频微机电并联电容开关的设计与仿真。开关的机电和电磁分析已使用COMSOL（FEM）和HFSS工具完成。拟议的开关的设计具有不均匀的弯曲和介电材料的氮化硅（Si ₃ N ₄）。使用不同的光束材料（例如金，铝和铂）来设计和分析开关。在开关的机电分析中，对于梁材料Platinum而言，对于2.5 µm的间隙（梁与信号线电介质之间），其插入电压为10.56 V，这与其他材料（例如金）相比是有效的和铝。就射频性能分析而言，已经计算出隔离度，插入损耗和回波损耗。隔离度，回波损耗和插入损耗分别为− 25 dB，− 14.3 dB和− 0.33 dB。在进行开关的应力分析时，对于施加的引入电压，获得的应力值为0.05 N / m ²。建议的开关用于C频段应用。