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High performance wide response GaAs based photo detector with nano texture on nanopillar arrays structure
Microsystem Technologies ( IF 2.1 ) Pub Date : 2020-03-10 , DOI: 10.1007/s00542-020-04804-x
Smriti Baruah , Joyatri Bora , Santanu Maity

Nanopillar arrays structure deployed over a top photodetector surface exhibits high light coupling efficiency which is attributed to their unique optical and structural properties. The paper presents a proposed GaAs material based periodic pyramidal cut nanopillar structure array model deployed over a 50 µm × 50 µm detector’s surface area. From the geometric analysis of the proposed model structure a maximum 99.8% light absorption has been achieved. Enhanced detector’s performance in terms of 0.75 A/W responsivity, as well as 56.8% external quantum efficiency for a narrow 0.5 µm depletion width, has also been demonstrated.



中文翻译:

纳米柱阵列结构上具有纳米纹理的高性能基于宽砷化镓的光电探测器

部署在顶部光电探测器表面的纳米柱阵列结构表现出高的光耦合效率,这归因于其独特的光学和结构特性。本文提出了一种建议的基于GaAs材料的周期性金字塔状切面纳米柱结构阵列模型,该模型在50 µm×50 µm探测器的表面积上展开。通过对所提出的模型结构进行几何分析,可以实现最大99.8%的光吸收。还证明了在0.75 A / W响应度方面的检测器性能得到了增强,以及在0.5 µm的窄耗尽宽度下具有56.8%的外部量子效率。

更新日期:2020-03-10
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