A theoretical model for describing the effect of depolarization field (Ed) in the negative capacitance (NC) field effect transistor (FET) was derived. Based on this model, the electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS) field effect transistor including the relationship between the depolarizing field and the gate voltage (Vg), Ed and silicon surface potential (), and the drain-source current (IDS) of NC-FET and Vg (transfer characteristics) were theoretically investigated. The computing results demonstrated that the surface potential amplification and the steep subthreshold slope characteristicsthe happened at the gate voltage of about 0.4 V results from the steep increase of Ed dependent on Vg in the NC-FETs. It is expected that the derived results may provide some insight into the design and performance improvement for the NC-MFIS-FET.

中文翻译：

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去极化场对负电容场效应晶体管陡峭开关特性的影响

推导出了用于描述去极化场 (Ed) 在负电容 (NC) 场效应晶体管 (FET) 中的影响的理论模型。基于此模型，金属-铁电-绝缘体-半导体 (MFIS) 场效应晶体管的电学特性包括去极化场与栅极电压 (Vg)、Ed 和硅表面电位 () 以及漏源极之间的关系理论上研究了 NC-FET 的电流 (IDS) 和 Vg (传输特性)。计算结果表明，在大约 0.4 V 的栅极电压下发生的表面电位放大和陡峭的亚阈值斜率特性是由于 NC-FET 中取决于 Vg 的 Ed 急剧增加所致。