A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely shield the N-injector and to protect the N-injector from high electric field more steadily. Then, the N-injector can be heavily doped to reduce the on-state voltage ( ${V} _{\mathrm{ on}}$ ), and ${V} _{\mathrm{ on}}$ can be designed independently of the breakdown voltage (BV). TCAD simulation indicates that under the same level of BV, compared with the conventional Carrier Store Trench Bipolar Transistor (CSTBT), the ${E} _{\mathrm{ off}}$ (the turn-off loss) of the proposed SIGBT is 85.6% lower under ${V} _{\mathrm{ on}}\approx 1.4$ V. Moreover, the saturation current density also decreases by 31.2%.

中文翻译：

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具有集成二极管的新型屏蔽 IGBT (SIGBT)

本文提出了一种新型 3.3 kV 屏蔽绝缘栅双极晶体管 (SIGBT)。与二极管钳位 TIGBT 的部分屏蔽 N 注入器（即载流子存储层）不同，SIGBT 具有二极管钳位 P 层，可完全屏蔽 N 注入器并保护 N 注入器免受高电场影响。稳步。然后，可以对 N 注入器进行重掺杂以降低导通电压（ ${V} _{\mathrm{ on}}$ ）， 和 ${V} _{\mathrm{ on}}$ 可以独立于击穿电压 (BV) 进行设计。TCAD 仿真表明，在相同的 BV 水平下，与传统的 Carrier Store Trench Bipolar Transistor (CSTBT) 相比， ${E} _{\mathrm{ off}}$ 建议 SIGBT 的（关断损耗）低于 85.6% ${V} _{\mathrm{ on}}\约 1.4$ V. 此外，饱和电流密度也降低了31.2%。