In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298–873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm2. The stability of the diode was investigated by exposing the sample to high temperature cycles (up to 873 K) for more than 10 times (totaling up to 120 hours), which exhibited no change between the I-V characteristics measured in each cycle. The dependence of ideality factor and Schottky barrier height on temperature along with an extracted Richardson’s constant much smaller than the theoretical value (0.0461 A/cm2.K2), motivated us to study the possible reason for this anomaly. A modified thermionic emission model following Tung’s analysis was used to explain the experimental observations. The model assumed the presence of inhomogeneous Schottky barrier heights leading to a reduced effective area and yielded a Richardson’s constant closer to the theoretical value. Conductive atomic force microscopy studies were conducted, which concurred with the electrical data and confirmed the presence of inhomogeneous Schottky barrier heights.

中文翻译：

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使用高达 873 K 的高温操作对金刚石 SPIND 进行肖特基势垒高度分析

在这项工作中，金刚石肖特基 PIN 二极管的高温性能报告在 298-873 K 范围内。金刚石二极管表现出高达 723 K 的显式整流，具有 >3000 A/cm2 的出色正向电流密度。通过将样品暴露于高温循环（高达 873 K）超过 10 次（总计高达 120 小时）来研究二极管的稳定性，在每个循环中测量的 IV 特性之间没有变化。理想因子和肖特基势垒高度对温度的依赖性以及提取的理查森常数远小于理论值 (0.0461 A/cm2.K2)，促使我们研究这种异常的可能原因。遵循 Tung 分析的修改后的热电子发射模型用于解释实验观察结果。该模型假设存在导致有效面积减小的不均匀肖特基势垒高度，并产生更接近理论值的理查森常数。进行了导电原子力显微镜研究，这与电学数据一致并证实了不均匀的肖特基势垒高度的存在。