In this paper, we demonstrated the high speed mid-wave infrared uni-traveling carrier (UTC) photodetectors based on InAs/GaSb type-II superlattice at room temperature. The device shows a 3dB bandwidth of 6.58 GHz and cutoff wavelength of 5.6μm at room temperature. The frequency response performance of the device is superior to the current HgCdTe, Quantum Well Infrared Photodetector, Quantum Cascade Photodetector, and Interband cascade photodetector technologies. To the best of our knowledge, this is the first UTC photodiode demonstrated at MWIR band operating at room temperature.

中文翻译：

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高速中波红外单行载波光电探测器


在本文中，我们展示了基于InAs/GaSb II型超晶格的室温高速中波红外单行载流子（UTC）光电探测器。该器件在室温下显示出 6.58 GHz 的 3dB 带宽和 5.6μm 的截止波长。该器件的频率响应性能优于当前的HgCdTe、量子阱红外光电探测器、量子级联光电探测器和带间级联光电探测器技术。据我们所知，这是第一个在室温下工作的 MWIR 波段展示的 UTC 光电二极管。