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In-Depth Exploration of the Charge Dynamics in Surface-Passivated ZnO Nanowires
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-06-26 , DOI: 10.1021/acs.jpcc.0c04199 Yaohong Zhang 1 , Shuhei Ozu 1 , Guohua Wu 2 , Chao Ding 1 , Feng Liu 1 , Dong Liu 1 , Takashi Minemoto 3 , Taizo Masuda 1, 4 , Shuzi Hayase 1 , Taro Toyoda 1 , Qing Shen 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-06-26 , DOI: 10.1021/acs.jpcc.0c04199 Yaohong Zhang 1 , Shuhei Ozu 1 , Guohua Wu 2 , Chao Ding 1 , Feng Liu 1 , Dong Liu 1 , Takashi Minemoto 3 , Taizo Masuda 1, 4 , Shuzi Hayase 1 , Taro Toyoda 1 , Qing Shen 1
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One-dimension ZnO nanowires (NWs) are widely used in many optoelectronic devices owing to their high optical transparency and excellent electron-transporting property. Unfortunately, there are various shallow-level and deep-level states in ZnO NWs, which usually act as the charge recombination centers of the devices. Surface passivation is an effective way to reduce deep-level states in ZnO NWs. However, how the surface passivation affects the charge dynamic process in ZnO NWs is still unclear. Herein, we carried out an in-depth study of the charge dynamics in surface-passivated ZnO NWs by using time-resolved photoluminescence and transient absorption spectroscopy techniques. The results show that the percentage of nonradiative recombination in ZnO NWs is efficiently reduced, and the lifetime of photoexcited carrier is increased after surface passivation. The introduction of a thin passivation layer like SnO2 can effectively reduce the rate of interfacial charge recombination without any adverse effect on the electron injection process.
中文翻译：
表面钝化ZnO纳米线中电荷动力学的深入探索
一维ZnO纳米线（NWs）由于其高的光学透明度和出色的电子传输性能而被广泛用于许多光电器件中。不幸的是，ZnO NW中存在各种浅层和深层状态，它们通常充当器件的电荷复合中心。表面钝化是减少ZnO纳米线深层态的有效方法。但是，表面钝化如何影响ZnO NWs中的电荷动态过程仍不清楚。本文中，我们使用时间分辨光致发光和瞬态吸收光谱技术对表面钝化ZnO NW中的电荷动力学进行了深入研究。结果表明，ZnO NWs中非辐射复合的百分比被有效降低，表面钝化后，光激发载体的寿命增加。像SnO这样的薄钝化层的引入2可以有效地降低界面电荷复合的速率而对电子注入过程没有任何不利影响。
更新日期：2020-07-23
中文翻译：
表面钝化ZnO纳米线中电荷动力学的深入探索
一维ZnO纳米线（NWs）由于其高的光学透明度和出色的电子传输性能而被广泛用于许多光电器件中。不幸的是，ZnO NW中存在各种浅层和深层状态，它们通常充当器件的电荷复合中心。表面钝化是减少ZnO纳米线深层态的有效方法。但是，表面钝化如何影响ZnO NWs中的电荷动态过程仍不清楚。本文中，我们使用时间分辨光致发光和瞬态吸收光谱技术对表面钝化ZnO NW中的电荷动力学进行了深入研究。结果表明，ZnO NWs中非辐射复合的百分比被有效降低，表面钝化后，光激发载体的寿命增加。像SnO这样的薄钝化层的引入2可以有效地降低界面电荷复合的速率而对电子注入过程没有任何不利影响。
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