The growth of In2Se3/Bi2Se3 superlattices (SLs) by molecular beam epitaxy at an elevated temperature is explored. The crystalline phase structure of In2Se3 layers in the as-grown SLs is determined to be α-In2Se3. The diffusion of In from In2Se3 to Bi2Se3 is significantly promoted, while Bi diffusion into In2Se3 layers is insignificant as manifested by the in situ lattice evolution analysis, so that the achieved SL structure is of graded (Bi1−xInx)2Se3 solid-solution layers periodically separated by α-In2Se3 layers. The lattice vibration characteristics due to phonon confinement in the achieved SLs are also exhibited.

中文翻译：

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分子束外延非对称梯度界面In2Se3/(Bi1−xInx)2Se3超晶格的生长及特性

探索了在高温下通过分子束外延生长 In2Se3/Bi2Se3 超晶格 (SL)。在生长的 SLs 中 In2Se3 层的结晶相结构被确定为 α-In2Se3。In 从 In2Se3 到 Bi2Se3 的扩散被显着促进，而 Bi 扩散到 In2Se3 层是微不足道的，如原位晶格演化分析所示，因此所获得的 SL 结构是周期性渐变的 (Bi1−xInx)2Se3 固溶层由 α-In2Se3 层隔开。还展示了由于所实现的 SL 中的声子限制引起的晶格振动特性。