We investigate the transport properties of a modified interface by intentionally inserting a nanometer-scale undoped ${\mathrm{Ba}\mathrm{Sn}\mathrm{O}}_3$ spacer layer at the ${\mathrm{La}\mathrm{In}\mathrm{O}}_3$/${\mathrm{Ba}}_{1\text{−}x}{\mathrm{La}}_x{\mathrm{Sn}\mathrm{O}}_3$ interface, thereby creating remotely doped heterostructures. Both the carrier density $(n_s)$ and the Hall mobility $({\mu }_H)$ continuously decrease as the thickness of the ${\mathrm{Ba}\mathrm{Sn}\mathrm{O}}_3$ spacer layer at the interface increases, indicating a changing electron-density profile as a function of the spacer thickness. We find the behavior is consistent with the recently proposed “interface-polarization” model by self-consistent one-dimensional Poisson-Schrödinger calculations. The decrease of $n_s$ makes it difficult to see the effect of the spacer layer on the mobility in the remotely doped structures due to the simultaneous decrease of $\mu$ caused by the ineffective screening of the remote Coulomb scattering from ionized donors in addition to the threading dislocation scattering. Hence, we control the band bending continuously via the field effect with a fixed spacer-layer thickness, leading to observation of enhanced mobility $({\mu }_{\mathrm{FE}})$ in the remotely doped 2DEG heterostructures in spite of high-density threading dislocations acting as the background charged impurities.

中文翻译：

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LaInO3 / BaSnO3极性界面处的二维电子气态的远程掺杂

我们通过有意插入纳米级未掺杂的材料来研究修饰界面的传输性质 ${巴锡\mathrm{Ø}}_3$ 间隔层 ${啦在\mathrm{Ø}}_3$/${巴}_{\mathrm{1个}\text{-}X}{啦}_X{锡\mathrm{Ø}}_3$界面，从而产生远程掺杂的异质结构。既载流子密度$（{ñ}_s）$ 和大厅的流动性 $（{\mu }_H）$ 随着厚度的增加而持续减小 ${巴锡\mathrm{Ø}}_3$界面处的隔离层增加，表明电子密度分布随隔离层厚度的变化而变化。通过自洽一维Poisson-Schrödinger计算，我们发现该行为与最近提出的“接口极化”模型相一致。减少${ñ}_s$ 由于同时降低了掺杂剂的含量，使得很难看到隔离层对远程掺杂结构中迁移率的影响。 $\mu$除了通过位错散射外，还无法有效地屏蔽来自电离施主的远程库仑散射。因此，我们通过具有固定间隔层厚度的场效应来连续控制带弯曲，从而观察到增强的迁移率$（{\mu }_{\mathrm{有限元}}）$ 尽管存在高密度的螺纹位错作为背景带电杂质，但在远程掺杂的2DEG异质结构中仍然存在。