当前位置：
X-MOL 学术
›
Chem. Asian J.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Solvent Vapor Annealing Upgraded Orderly Intermolecular Stacking and Crystallinity to Enhance Memory Device Performance.
Chemistry - An Asian Journal ( IF 3.5 ) Pub Date : 2020-06-26 , DOI: 10.1002/asia.202000577 Chunxiu Guo 1 , Qijian Zhang 1 , Hua Li 1 , Jianmei Lu 1
Chemistry - An Asian Journal ( IF 3.5 ) Pub Date : 2020-06-26 , DOI: 10.1002/asia.202000577 Chunxiu Guo 1 , Qijian Zhang 1 , Hua Li 1 , Jianmei Lu 1
Affiliation
|
Molecular stacking and crystallinity in a film can effectively affect the charge‐carrier mobility of semiconductor materials and corresponding device performance. Currently, solvent vapor annealing (SVA), as an effective thin‐film optimization strategy, which can select the appropriate solvent according to the characteristics of the molecular structure to optimize the intermolecular orderly arrangement, is often adopted. Thus, a small conjugated molecule C20‐ID(TPCN)2 with flexible alkyl side chains was synthesized and applied as active layer of sandwich memory devices. The active layer film has been annealed with different polar solvent vapors to evaluate the relationship among the molecular structure, solvent selection, annealing parameters and intermolecular stacking. Compared to un‐annealed devices, the memory devices based on the films through CH2Cl2‐annealing show better performance with a lower threshold voltage due to developed ordered molecular aggregation and better crystallinity, while a hydrophilic solvent vapor will weaken the device performance. This work not only reveals that selecting an appropriate solvent vapor for the molecular structure could be of vital importance in inducing the desired intermolecular stacking mode, but also provides a novel insight for the realization of organic semiconductor devices with excellent performance.
中文翻译：
溶剂蒸气退火处理升级了分子间的有序堆积和结晶度，以增强存储设备的性能。
膜中的分子堆积和结晶度可以有效地影响半导体材料的载流子迁移率和相应的器件性能。目前，通常采用溶剂蒸汽退火（SVA）作为有效的薄膜优化策略，该方法可以根据分子结构的特征选择合适的溶剂以优化分子间的有序排列。因此，一个小的共轭分子C 20 -ID（TPCN）2合成了具有柔性烷基侧链的聚合物，并将其用作三明治存储器件的活性层。活性层膜已通过不同极性的溶剂蒸气退火，以评估分子结构，溶剂选择，退火参数和分子间堆积之间的关系。与未退火的设备相比，基于CH 2 Cl 2的薄膜的存储设备由于有序的分子聚集和更好的结晶性，退火显示出较低的阈值电压时具有更好的性能，而亲水性溶剂蒸气会削弱器件的性能。这项工作不仅揭示了为分子结构选择合适的溶剂蒸气对于诱导所需的分子间堆叠模式至关重要，而且为实现具有优异性能的有机半导体器件提供了新颖的见解。
更新日期：2020-08-18
中文翻译：
溶剂蒸气退火处理升级了分子间的有序堆积和结晶度，以增强存储设备的性能。
膜中的分子堆积和结晶度可以有效地影响半导体材料的载流子迁移率和相应的器件性能。目前，通常采用溶剂蒸汽退火（SVA）作为有效的薄膜优化策略，该方法可以根据分子结构的特征选择合适的溶剂以优化分子间的有序排列。因此，一个小的共轭分子C 20 -ID（TPCN）2合成了具有柔性烷基侧链的聚合物，并将其用作三明治存储器件的活性层。活性层膜已通过不同极性的溶剂蒸气退火，以评估分子结构，溶剂选择，退火参数和分子间堆积之间的关系。与未退火的设备相比，基于CH 2 Cl 2的薄膜的存储设备由于有序的分子聚集和更好的结晶性，退火显示出较低的阈值电压时具有更好的性能，而亲水性溶剂蒸气会削弱器件的性能。这项工作不仅揭示了为分子结构选择合适的溶剂蒸气对于诱导所需的分子间堆叠模式至关重要，而且为实现具有优异性能的有机半导体器件提供了新颖的见解。
京公网安备 11010802027423号