In this article density functional calculations were utilized to determine the characteristics and the enhancement of thermoelectric efficiency of monolayer Si₂BN (Si₂BN_mono) in the presence and absence of biaxial strain. Furthermore, we studied the structural stability and thermoelectric and electronic properties of eight various stacking of the bilayer Si₂BN (Si₂BN_bi). Metallic behavior was observed as a result of the band structure of Si₂BN_mono and Si₂BN_bi. This issue prompted an emphasis on the metallic characteristics comprising electrical conductivity per relaxation time (σ/τ) and Work Function (WF). By comparing the σ/τ and WF between the graphene and Si₂BN, it is concluded that σ/τ_gheraphene is less than ${\sigma /\tau }_{{\mathit{Si}}_{2}BN}$ and ${\mathit{WF}}_{{\mathit{Si}}_{2}BN}$ is close to WF_graphene. Finally, the highest figure of merit (ZT) for Si₂BN_mono without strain and with + 10% strain on the Fermi energy were 0.15 and 0.16, respectively. Moreover, it was 0.76 for the A₁B₂ stacking of Si₂BN_bi for energy below the Fermi level.

在本文中，利用密度泛函计算来确定在存在和不存在双轴应变的情况下单层Si ₂ BN（Si ₂ BN _mono）的特性和热电效率的提高。此外，我们研究了双层Si ₂ BN（Si ₂ BN _bi）的八种不同堆叠的结构稳定性以及热电和电子性能。通过Si ₂ BN _mono和Si ₂ BN _bi的能带结构观察到金属行为。这个问题促使人们强调金属特性，包括每弛豫时间的电导率（σ/τ）和功函数（WF）。通过比较石墨烯和Si ₂ BN的σ/τ和WF ，可以得出σ/ _τgheraphene小于${\sigma /\tau }_{{\mathit{硅}}_2乙ñ}$ 和 ${\mathit{WF}}_{{\mathit{硅}}_2乙ñ}$与WF_石墨烯接近。最后，Si ₂ BN_单晶的无应变和在费米能量上具有+ 10％应变的最高品质因数（ZT）分别为0.15和0.16。此外，对于Si ₂ BN _bi的A ₁ B ₂堆叠，在费米能级以下的能量为0.76 。