In this work, high quality uniform and dense nanostructured cobalt-doped zinc oxide (ZnO:Co) films were used as electron-transport layers in CH₃NH₃PbI₃-based planar heterojunction perovskite solar cells (PSCs) on a flexible conductive substrate. Highly photo catalytically active ZnO:Co films were prepared by a low cost hydrothermal process using the aqueous solution of zinc nitrate hexahydrate, hexamethylenete-tramine and cobalt (II) nitrate hexahydrate. ZnO:Co films were deposited on indium tin oxide (ITO) covered polyethylene terephthalate (PET) flexible substrates. The growth was controlled by maintaining the autoclave temperature at 150 °C for 4 h. The CH₃NH₃PbI₃ layer was deposited on the ZnO:Co films by spin coating. Spiro-OMeTAD was employed as a hole-transporting material. The structural, morphology and optical properties of the grown ZnO nanostructures were characterized by X-ray diffraction (XRD), field-emission scanning electron microcopy (FESEM), energy-dispersive X-ray spectrometry (EDX), ultraviolet-visible (UV-Vis) and photoelectrochemical propriety. XRD spectra showed that both ZnO and ZnO:Co nanorods had a hexagonal wurtzite structure with a strong preferred orientation along the (002) plane. The surface morphology of films was studied by FESEM and showed that both the pure and Co-doped ZnO films had hexagonal shaped nanorods. In the steady state, the ZnO electrode gave a photocurrent density of about 1.5 mA/cm². However, the Co-doped ZnO electrode showed a photocurrent density of about 6 mA/cm², which is 4-fold higher than that of the ZnO electrode. Based on the above synthesized Co-doped ZnO films, the photovoltaic performance of PSCs was studied. The Co-doped ZnO layers had a significant impact on the photovoltaic conversion efficiency (PCE) of the PSCs. The latter was attributed to an efficient charge separation and transport due to the better coverage of perovskite on the nanostructured Co-doped ZnO films. As a result, the measured PCE under standard solar conditions (A M 1.5G, 100 mW/cm²) reached 7%. SCAPS-1D simulation was also performed to analyze the effect of the co-doped ZnO thin film on the corresponding solar cell performances.

在这项工作中，高质量均匀且致密的纳米结构钴掺杂氧化锌（ZnO：Co）薄膜被用作柔性导电基板上基于CH ₃ NH ₃ PbI ₃的平面异质结钙钛矿太阳能电池（PSC）中的电子传输层。。使用六水合硝酸锌，六亚甲基六胺和六水合硝酸钴（II）的水溶液，通过低成本水热工艺制备了具有高光催化活性的ZnO：Co薄膜。ZnO：Co膜沉积在氧化铟锡（ITO）覆盖的聚对苯二甲酸乙二醇酯（PET）柔性基板上。通过将高压釜温度在150°C下保持4小时来控制生长。CH ₃ NH ₃ PbI ₃通过旋涂将有机层沉积在ZnO：Co膜上。Spiro-OMeTAD被用作空穴传输材料。通过X射线衍射（XRD），场发射扫描电子显微镜（FESEM），能量色散X射线光谱（EDX），紫外可见（UV-UV）表征了生长的ZnO纳米结构的结构，形态和光学性质。可见）和光电化学特性。XRD谱图表明，ZnO和ZnO：Co纳米棒均具有六方纤锌矿结构，其沿（002）面具有强烈的优选取向。用FESEM研究了薄膜的表面形貌，结果表明纯Zn和Co掺杂的ZnO薄膜均具有六角形的纳米棒。在稳定状态下，ZnO电极的光电流密度约为1.5 mA / cm ²。然而，Co掺杂的ZnO电极显示出约6mA / cm ²的光电流密度，这比ZnO电极的光电流密度高4倍。基于以上合成的Co掺杂ZnO薄膜，研究了PSCs的光伏性能。Co掺杂的ZnO层对PSC的光电转换效率（PCE）具有重大影响。后者归因于钙钛矿在纳米结构共掺杂ZnO薄膜上的更好覆盖，从而有效地进行了电荷分离和传输。结果，在标准太阳条件下（AM 1.5G，100 mW / cm ²）测得的PCE达到了7％。还进行了SCAPS-1D仿真，以分析共掺杂ZnO薄膜对相应太阳能电池性能的影响。