Analog resistive switching (ARS) is an important characteristic of resistive random-access memory (RRAM) used as a synaptic device. An interface switching cross-point RRAM was fabricated with Au/TiOx/AlOσ/Al stacked structure in order to investigate its conduction mechanism and synaptic behaviour. The gradual resistive switching characteristic of the fabricated AlOσ-based RRAM was demonstrated and the ARS conduction mechanism was analyzed by using the DC sweep technique. The I-V relationship shows that the conduction mechanism in the RESET state is governed by Schottky conduction, which was confirmed by a linear relationship from Log (I) vs. Sqrt(V) graph, while the conduction mechanism in the SET state is governed by Poole-Frenkel (P-F) conduction, which was confirmed by a linear relationship from Log (I/V) vs. Sqrt (V) graph. This AlOσ-based device also showed long-term potentiation (LTP) and long-term depression (LTD) characteristics, which are crucial in developing convolutional neural networks (CNNs) based neuromorphic systems, by using identical pulse series. The experimental results demonstrate that mimicking the synaptic characteristics of the neuromorphic systems would be possible with an interface switching cross-point AlOσ-based RRAM device with Au/TiOx/AlOσ/Al layer.

中文翻译：

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基于Al2Oσ的界面切换RRAM的传导机制和突触行为

模拟电阻开关 (ARS) 是用作突触设备的电阻式随机存取存储器 (RRAM) 的一个重要特性。为了研究其传导机制和突触行为，使用 Au/TiOx/AlOσ/Al 堆叠结构制造了界面切换交叉点 RRAM。证明了所制造的基于 AlOσ 的 RRAM 的逐步电阻开关特性，并使用 DC 扫描技术分析了 ARS 传导机制。IV 关系表明，RESET 状态下的传导机制受肖特基传导控制，这由 Log (I) vs. Sqrt(V) 图的线性关系证实，而 SET 状态下的传导机制受 Poole 控制-Frenkel (PF) 传导，这通过 Log (I/V) 与 Sqrt (V) 图的线性关系得到证实。这种基于 AlOσ 的设备还显示出长时程增强 (LTP) 和长时程抑制 (LTD) 特性，这对于通过使用相同的脉冲序列开发基于卷积神经网络 (CNN) 的神经形态系统至关重要。实验结果表明，使用具有 Au/TiOx/AlOσ/Al 层的界面切换交叉点 AlOσ 基 RRAM 器件可以模仿神经形态系统的突触特性。