The understanding of the influence of energetic ions on the transport properties of semiconductor materials is essential to design the devices for use in a radiation environment. In this article, an in-situ investigation of the effect of 100 MeV O7+ irradiation on the current-voltage characteristics of the Pd/n-Si Schottky barrier structure is carried out. It is observed that the interface barrier parameters (Ideality Factor, Schottky barrier height and reverse saturation current) are a strong function of ion fluence. The voltage dependence of conduction mechanisms indicates the presence of defects near the interface as well as in bulk silicon. The energy loss mechanisms of energetic ions in the Pd/n-Si structure are used to explain the observed results after irradiation.

中文翻译：

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高能离子辐照下 Pd/n-Si 中电输运的原位研究

了解高能离子对半导体材料传输特性的影响对于设计用于辐射环境的设备至关重要。在本文中，进行了 100 MeV O7+ 辐照对 Pd/n-Si 肖特基势垒结构的电流-电压特性的影响的原位研究。据观察，界面势垒参数（理想因子、肖特基势垒高度和反向饱和电流）是离子注量的强函数。传导机制的电压依赖性表明界面附近以及体硅中存在缺陷。Pd/n-Si 结构中高能离子的能量损失机制用于解释辐照后的观察结果。