Substitutional doping of hybrid organic–inorganic perovskite crystals for thermoelectrics,Journal of Materials Chemistry A

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Substitutional doping of hybrid organic–inorganic perovskite crystals for thermoelectrics
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2020-06-25 , DOI: 10.1039/d0ta03648j
Weidong Tang _{1,

2,

3,

4,

5} , Jinshuai Zhang _{1,

2,

3,

4} , Sinclair Ratnasingham _{4,

6,

7,

8} , Fabiola Liscio _{9,

10,

11} , Kan Chen _{1,

2,

3,

4} , Tianjun Liu _{1,

2,

3,

4,

5} , Kening Wan _{1,

2,

3,

4,

5} , Eugenio Suena Galindez _{1,

2,

3,

4,

5} , Emiliano Bilotti _{1,

2,

3,

4,

5} , Mike Reece _{1,

2,

3,

4} , Mark Baxendale _{2,

3,

4,

5,

12} , Silvia Milita _{9,

10,

11} , Martyn A. McLachlan _{4,

6,

7,

8} , Lei Su _{1,

2,

3,

4} , Oliver Fenwick _{1,

2,

3,

4,

5}

Affiliation

Hybrid organic–inorganic perovskites have generated considerable research interest in the field of optoelectronic devices. However, there have been significantly fewer reports of their thermoelectric properties despite some promising early results. In this article, we investigate the thermoelectric properties of bismuth-doped CH₃NH₃PbBr₃ (MAPbBr₃) single crystals. The high-quality Bi-doped crystals were synthesized by inverse temperature crystallization and it was found that Bi substitutes onto the B-site of the ABX₃ perovskite lattice of MAPbBr₃ crystals with very little distortion of the crystal structure. Bi doping does not significantly alter the thermal conductivity but dramatically enhances the electrical conductivity of MAPbBr₃, increasing the charge carrier density by more than three orders of magnitude. We obtained a negative Seebeck coefficient of −378 μV K⁻¹ for 15% (x = 0.15) Bi-doped MAPb_(1−x)Bi_xBr₃ confirming n-type doping and also measured the figure of merit, ZT. This work highlights routes towards controlled substitutional doping of halide perovskites to optimise them for thermoelectric applications.

中文翻译：

热电学中有机-无机钙钛矿杂化晶体的替代掺杂

混合的有机-无机钙钛矿在光电器件领域引起了相当大的研究兴趣。然而，尽管有一些令人鼓舞的早期结果，但有关其热电性能的报道却很少。在本文中，我们研究了铋掺杂的CH ₃ NH ₃ PbBr ₃（MAPbBr ₃）单晶的热电性能。通过逆温度结晶合成了高质量的Bi掺杂晶体，发现Bi取代了MAPbBr ₃的ABX ₃钙钛矿晶格的B位。晶体的晶体结构几乎没有变形。Bi掺杂不会显着改变热导率，但会显着提高MAPbBr _3的电导率，从而使载流子密度增加三个数量级以上。对于15％（x = 0.15）Bi掺杂的MAPb _（1-_x_） Bi _x Br _3，我们获得了-378μVK ^-1的负塞贝克系数，证实了n型掺杂，并且还测量了品质因数ZT。这项工作重点介绍了实现卤代钙钛矿受控置换掺杂以优化其热电应用的途径。

更新日期：2020-07-14

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