In this study, MAPbBr₃ single crystal (MSC) p‐n perovskite homojunction photodiode and n‐p‐n phototriode are successfully fabricated through controlled incorporation of Bi³⁺ ions in solution. Optoelectronic analysis reveals that the photodiode shows typical photovoltaic behavior and the best photovoltaic performance can be achieved when the n‐type MSC is grown in 0.3% Bi³⁺ feed solution. The as‐assembled p‐n MSC photovoltaic detector displays obvious sensitivity to 520 nm illumination, with a high responsivity of up to 0.62 A W^‐1 and a specific detectivity of 2.16 × 10¹² Jones, which surpass many those of MSC photodetectors previously reported. Further performance optimization can be realized by constructing an n‐p‐n phototriode using the same growth method. The photocurrent magnification rate of the as‐fabricated n‐p‐n phototriode can reach a maximum value of 2.9 × 10³. Meanwhile, a higher responsivity of 14.47 A W^‐1, specific detectivity of 4.67 × 10¹³ Jones, and an external quantum efficiency of up to 3.46 × 10³ are achieved under an emitter–collector bias of 8 V. These results confirm that the present p‐n and n‐p‐n MSC homojunctions are promising device configurations, which may find potential application in future optoelectronic devices and systems.

中文翻译：

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MAPbBr3单晶p-n光电二极管和n-p-n光电三极管的制造，用于敏感光检测应用

在这项研究中，通过控制溶液中Bi ³⁺离子的掺入，成功制备了MAPbBr ₃单晶（MSC）p-n钙钛矿同质结光电二极管和n-p-n光电三极管。光电分析表明，光电二极管表现出典型的光伏行为，并且当n型MSC在0.3％Bi ³⁺进料溶液中生长时，可以获得最佳的光伏性能。组装后的p-n MSC光伏检测器对520 nm照明显示出明显的灵敏度，具有高达0.62 AW ^-1的高响应度和2.16×10 ¹²的比检测率琼斯超越了以前报道的许多MSC光电探测器。通过使用相同的生长方法构建一个n-p-n光电三极管，可以实现进一步的性能优化。制成的n-p-n光电三极管的光电流放大率可以达到2.9×10 ³的最大值。同时，在8 V的发射极-集电极偏置下，实现了14.47 AW ^-1的更高响应度，4.67×10 ¹³ Jones的比检测率和高达3.46×10 ³的外部量子效率。这些结果证实了目前p-n和n-p-n MSC同质结是有前途的设备配置，可能会在未来的光电设备和系统中找到潜在的应用。