Abstract In this work we present a method for mapping the degree of charge transfer (ρCT) on variously etched GaN surfaces covered by nanoclusters of silver using Raman imaging. The goal was to map ρCT across the surface of a substrate in order to discover the surface features which stimulate relatively large charge transfer from molecule to substrate. These substrates were used because they contain a variety of physical features designed to facilitate surface enhanced Raman spectroscopy (SERS). A clear correlation was found between these features and the degree of charge transfer. To our knowledge no previously published report had used degree of charge transfer as a mapping tool. This type of analysis could lend itself to many applications, such as the evaluation of charge injection across the surface of a light harvesting dye-sensitized solar cell or photovoltaic device.

中文翻译：

---

使用表面增强拉曼光谱对纳米结构 GaN/Ag 表面进行电荷转移映射

摘要 在这项工作中，我们提出了一种使用拉曼成像在被银纳米团簇覆盖的各种蚀刻 GaN 表面上绘制电荷转移程度 (ρCT) 的方法。目标是在基板表面绘制 ρCT，以发现刺激从分子到基板的较大电荷转移的表面特征。之所以使用这些基材，是因为它们包含各种旨在促进表面增强拉曼光谱 (SERS) 的物理特征。在这些特征和电荷转移程度之间发现了明显的相关性。据我们所知，以前发表的报告都没有使用电荷转移程度作为映射工具。这种类型的分析可以适用于许多应用程序，