Abstract Scaling study of polycrystalline InAs thin films grown by molecular beam epitaxy on c-plane sapphire (001) substrate has been presented using atomic force microscopy, corresponding height-height correlation function and two-dimensional fast Fourier transform profiles. Height-height correlation function profiles exhibit oscillations at larger lateral distances along with ring-like features in the respective two-dimensional fast Fourier transform scans and clearly indicate mound-like surface morphology. Scaling parameters, interface width and lateral correlation length were extracted and their dependence on the growth temperatures were investigated. The growth mechanism has been well explained in terms of diffusion effects and the obtained parameters qualitatively agrees with the parameters obtained for the growth of InAs films grown on Si(100) substrate under identical growth conditions. Our study suggests that molecular beam epitaxy grown InAs thin films on lattice mismatched substrates (c-plane sapphire(001) and Si(100) substrate) follows the same growth behavior under identical growth conditions.

中文翻译：

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使用原子力显微镜对分子束外延生长的 InAs/Al2O3 薄膜进行缩放研究

摘要 使用原子力显微镜、相应的高度-高度相关函数和二维快速傅立叶变换轮廓，对通过分子束外延在 c 面蓝宝石 (001) 衬底上生长的多晶 InAs 薄膜进行缩放研究。高度-高度相关函数剖面在较大的横向距离处表现出振荡以及相应二维快速傅立叶变换扫描中的环状特征，并清楚地表明类似土墩的表面形态。提取了缩放参数、界面宽度和横向相关长度，并研究了它们对生长温度的依赖性。在扩散效应方面已经很好地解释了生长机制，并且获得的参数与在相同生长条件下在 Si(100) 衬底上生长的 InAs 薄膜的生长参数定性一致。我们的研究表明，分子束外延生长的 InAs 薄膜在晶格不匹配的衬底（c 面蓝宝石（001）和 Si（100）衬底）上在相同的生长条件下遵循相同的生长行为。