In this paper, a tight binding approach is employed to compute the electronic properties of the armchair MoS₂ nanoribbon. Among the three distinct groups of pristine armchair nanoribbons, the family with index N = 3p+2, (p being an integer), renders the highest band gap energy. Furthermore, having the Hamiltonian matrix and using the imaginary part of the dielectric function, the optical properties of the armchair nanoribbons are calculated for different widths. The transitions between subbands of the armchair MoS₂ nanoribbons lead to peaks in the dielectric function. Simulation results illustrate how ribbon's width, may be tuned to design nanoribbon's band gap for a specific optoelectronic or digital electronic application.

在本文中，采用紧密结合的方法来计算扶手椅MoS ₂纳米带的电子性能。在三个不同的原始扶手椅纳米带组中，索引为N = 3p + 2（p为整数）的族提供了最高的带隙能。此外，具有哈密顿矩阵并使用介电函数的虚部，可以计算出不同宽度的扶手椅纳米带的光学特性。扶手椅式MoS ₂纳米带子带之间的过渡导致介电功能出现峰值。仿真结果说明了如何调整色带的宽度，以设计用于特定光电或数字电子应用的纳米带的带隙。