In this paper, we study the electronic structures and electronic transport properties of wide buckled and puckered antimonene nanoribbions (SbNRs) via edge hydrogenation and oxidation by using a first principle method. The calculated results show that the edge passivations play an important role in the band structures of wide buckled and puckered SbNRs. The current-voltage characteristics of buckled and puckered SbNRs consistent with their band structures. The currents of buckled and puckered SbNR devices via edge hydrogenation are nearly zero at low bias region, but the edge oxidation can enlarge the device’s conductance obviously. More importantly, the tunable negative differential resistance behavior can be found in the buckled and puckered SbNR devices via edge oxidation. Our researches are of great significance for the subsequent application of SbNR devices.

在本文中，我们采用第一原理方法研究了通过屈曲和皱折的宽屈曲和起皱的锑烯纳米核（SbNRs）的电子结构和电子输运性质。计算结果表明，边缘钝化在宽屈曲和起皱的SbNRs的能带结构中起着重要作用。弯曲和起皱的SbNRs的电流-电压特性与其带结构一致。SbNR器件在低偏压区通过边缘氢化产生的弯曲电流和折皱电流几乎为零，但边缘氧化可明显增大器件的电导率。更重要的是，可以通过边缘氧化在弯曲和皱折的SbNR器件中找到可调的负差分电阻行为。