Two-dimensional (2D) materials have recently received great attention for their atomic thin thickness and thus derived outstanding electrical, optical and optoelectronic properties. Moreover, the dangling-bond-free surfaces of 2D materials enable the direct integration of different materials with various properties through van der Waals (vdW) forces into vdW heterostructures, providing new opportunities for constructing new type devices with superior performances. In this study, we report the vertical assembly of n-type CdS and p-type BP into p-n junctions. The electrically tunable heterojunction device shows a high current rectifying ratio up to 8×10³ at a low bias voltage range of ±1 V and an ideality factor of 1.5. More interestingly, the CdS/BP vdW heterojunction exhibits an ultra-high photoresponsivity up to 9.2×10⁵ A W⁻¹ and an ultra-high specific detectivity of 3.2×10¹³ Jones with a low bias voltage of 1.0 V, which is among the highest in the reported results of 2D heterostructures. While operated at a self-powered mode, the device also exhibits excellent photodetection performances with a high photoresponsivity of 0.27 A W⁻¹ and a high external quantum efficiency of 76%. Time-resolved photoresponse characterizations indicate that the device possesses a fast response time of about 10 ms. The developed CdS/BP vdW heterojunctions will find potential applications in the next-generation nanoscale electronics and optoelectronics applications.

二维（2D）材料由于其原子的薄厚度而受到了极大的关注，因此具有出色的电，光和光电特性。此外，二维材料的无悬挂键表面可通过范德华力（vdW）将具有各种特性的不同材料直接集成到vdW异质结构中，为构建性能卓越的新型器件提供了新的机会。在这项研究中，我们报告了n型CdS和p型BP在pn结中的垂直组装。电可调异质结器件显示高达8×10 ³的高电流整流比在±1 V的低偏置电压范围内，理想因数为1.5。更有趣的是，CdS / BP vdW异质结表现出高达9.2×10 ⁵ AW ^-1的超高光响应性和3.2×10 ¹³ Jones的超高比探测性，且偏置电压为1.0 V，这是在2D异质结构的报告结果中最高。在自供电模式下运行时，该设备还具有出色的光电检测性能，光响应度为0.27 AW ^-1外部量子效率高达76％。时间分辨的光响应特性表明该器件具有约10 ms的快速响应时间。已开发的CdS / BP vdW异质结将在下一代纳米级电子和光电应用中找到潜在的应用。