Layered MoTe₂ has shown great promises for optoelectronics and energy-storage applications due to its exceptional optical and electrochemical properties. To date, considerable efforts have been devoted to fabricating layered MoTe₂ with lateral orientation by means of mechanical/chemical exfoliation and chemical vapor deposition (CVD) methods. As compared to its horizontal counterparts, vertically aligned MoTe₂ with higher density of active edge sites is expected to possess unique optoelectronic and electrochemical properties, while which has not been reported yet. In this work, we report a versatile and scalable CVD growth of vertically aligned MoTe₂ with length of up to ∼ 7.5 µm on Mo foil. Remarkably, the dominant phase of the vertically aligned MoTe₂ can be tuned from 2H to 1T’ by increasing the growth temperature from 630 to 780 °C. Owing to the weak interaction between the as-grown MoTe₂ and Mo foil, the as-grown MoTe₂ can be easily detached from the Mo foil. This in turn enabled economic reuse of the Mo foil for multiple growth. Moreover, the vertical growth of the MoTe₂ is proposed to be caused by the internal strain generated during tellurization of Mo foil. Furthermore, the as-grown MoTe₂ can also be directly dispersed in solvent to produce high-quality MoTe₂ nanosheets. The versatility of this growth strategy was further demonstrated by fabricating other vertically aligned TMDs such as TaTe₂ and MoSe₂. Hence, this work paves the path towards achieving unique TMDs structures to enable high-performance optoelectronic and electrochemical devices.

层状MoTe ₂由于其出色的光学和电化学性能，在光电和储能应用中显示出了广阔的前景。迄今为止，已经通过机械/化学剥离和化学气相沉积（CVD）方法致力于制造具有横向取向的层状MoTe ₂。与其水平的对应物相比，具有较高的活性边缘位点密度的垂直排列的MoTe ₂有望具有独特的光电和电化学性能，但尚未有报道。在这项工作中，我们报告了垂直排列的MoTe ₂的多功能且可扩展的CVD生长在Mo箔上的最大长度约为7.5 µm。值得注意的是，通过将生长温度从630°C升高到780°C，可以将垂直排列的MoTe ₂的主相从2H调节到1T'。由于所生长的MoTe ₂与Mo箔之间的弱相互作用，因此所生长的MoTe ₂可以容易地从Mo箔分离。这反过来又使Mo箔能够经济地重复利用，从而实现多重增长。此外，提出MoTe ₂的垂直生长是由在Mo箔的碲化期间产生的内部应变引起的。此外，所生长的MoTe ₂也可以直接分散在溶剂中以生产高质量的MoTe ₂纳米片。通过制造其他垂直排列的TMD，例如TaTe ₂和MoSe ₂，进一步证明了该增长策略的多功能性。因此，这项工作为实现独特的TMD结构以实现高性能的光电和电化学设备铺平了道路。