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Versatile and scalable chemical vapor deposition of vertically aligned MoTe 2 on reusable Mo foils
Nano Research ( IF 9.5 ) Pub Date : 2020-06-25 , DOI: 10.1007/s12274-020-2857-y
Jinjun Lin , Hong Wang , Roland Yingjie Tay , Hongling Li , Maziar Shakerzadeh , Siu Hon Tsang , Zheng Liu , Edwin Hang Tong Teo

Layered MoTe2 has shown great promises for optoelectronics and energy-storage applications due to its exceptional optical and electrochemical properties. To date, considerable efforts have been devoted to fabricating layered MoTe2 with lateral orientation by means of mechanical/chemical exfoliation and chemical vapor deposition (CVD) methods. As compared to its horizontal counterparts, vertically aligned MoTe2 with higher density of active edge sites is expected to possess unique optoelectronic and electrochemical properties, while which has not been reported yet. In this work, we report a versatile and scalable CVD growth of vertically aligned MoTe2 with length of up to ∼ 7.5 µm on Mo foil. Remarkably, the dominant phase of the vertically aligned MoTe2 can be tuned from 2H to 1T’ by increasing the growth temperature from 630 to 780 °C. Owing to the weak interaction between the as-grown MoTe2 and Mo foil, the as-grown MoTe2 can be easily detached from the Mo foil. This in turn enabled economic reuse of the Mo foil for multiple growth. Moreover, the vertical growth of the MoTe2 is proposed to be caused by the internal strain generated during tellurization of Mo foil. Furthermore, the as-grown MoTe2 can also be directly dispersed in solvent to produce high-quality MoTe2 nanosheets. The versatility of this growth strategy was further demonstrated by fabricating other vertically aligned TMDs such as TaTe2 and MoSe2. Hence, this work paves the path towards achieving unique TMDs structures to enable high-performance optoelectronic and electrochemical devices.



中文翻译:

垂直排列的MoTe 2在可重复使用的Mo箔上的多功能且可扩展的化学气相沉积

层状MoTe 2由于其出色的光学和电化学性能,在光电和储能应用中显示出了广阔的前景。迄今为止,已经通过机械/化学剥离和化学气相沉积(CVD)方法致力于制造具有横向取向的层状MoTe 2。与其水平的对应物相比,具有较高的活性边缘位点密度的垂直排列的MoTe 2有望具有独特的光电和电化学性能,但尚未有报道。在这项工作中,我们报告了垂直排列的MoTe 2的多功能且可扩展的CVD生长在Mo箔上的最大长度约为7.5 µm。值得注意的是,通过将生长温度从630°C升高到780°C,可以将垂直排列的MoTe 2的主相从2H调节到1T'。由于所生长的MoTe 2与Mo箔之间的弱相互作用,因此所生长的MoTe 2可以容易地从Mo箔分离。这反过来又使Mo箔能够经济地重复利用,从而实现多重增长。此外,提出MoTe 2的垂直生长是由在Mo箔的碲化期间产生的内部应变引起的。此外,所生长的MoTe 2也可以直接分散在溶剂中以生产高质量的MoTe 2纳米片。通过制造其他垂直排列的TMD,例如TaTe 2和MoSe 2,进一步证明了该增长策略的多功能性。因此,这项工作为实现独特的TMD结构以实现高性能的光电和电化学设备铺平了道路。

更新日期:2020-06-25
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