Low-temperature magnetotransport measurements are performed on GaAs/InSb core–shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p -type to the n -type region. Simulations based on a self-consistent Schrödinger–Poisson solver revealed that the ambipolar characteristics originate from a Fermi level dependent occupation of hole and electron states within the approximately circular quantum well formed in the InSb shell. By applying a perpendicular magnetic field with respect to the nanowire axis, conductance fluctuations were observed, which are used to extract the phase-coherence length. By averaging the magneto-conductance traces at different back-gate voltages, weak antilocalization features are resolved. Regular flux-periodic conductance oscillations are measured when an axial ma...

中文翻译：

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GaAs / InSb核/壳纳米线中的相干传输和自旋轨道相互作用

低温磁传输测量是在GaAs / InSb核-壳纳米线上进行的。纳米线通过分子束外延自催化生长。作为背栅电压的函数的电导率测量显示出双极性行为，该双极性行为包括在从p型区域到n型区域的过渡之间的绝缘范围。基于自洽Schrödinger-Poisson求解器的模拟显示，双极性特性源自InSb壳中形成的近似圆形量子阱中与费米能级有关的空穴和电子态的占据。通过施加相对于纳米线轴的垂直磁场，观察到电导波动，该波动用于提取相干长度。通过平均不同背栅电压下的磁导迹线，弱的反本地化功能已解决。轴向磁通量测量定期的磁通周期电导振荡