We report tunable permittivity of La-doped BaSnO 3 (LBSO) epitaxial films in the near- and mid-infrared range. The structural, electrical transport, and optical properties of the LBSO thin films can be effectively modified by controlling oxygen concentration during film growth. The permittivity of the LBSO films can be modified as a function of the oxygen pressure and temperature during deposition, which allows the tuning of their epsilon-near-zero wavelength from 2 µ m to 5.6 µ m. The ability to tune the permittivity in this infrared range enables the use of LBSO films as active components in infrared plasmonic devices.

中文翻译：

---

La掺杂BaSnO 3薄膜对近红外和中红外等离子体的可调谐介电常数

我们报告了在近红外和中红外范围内掺La的BaSnO 3（LBSO）外延膜的可调介电常数。LBSO薄膜的结构，电传输和光学特性可以通过控制薄膜生长过程中的氧气浓度来有效地加以修改。LBSO膜的介电常数可以根据沉积过程中氧气压力和温度的变化进行调整，从而可以将其ε近零波长从2 µm调整为5.6 µm。在此红外范围内调节介电常数的能力使得能够将LBSO膜用作红外等离子体设备中的活性成分。