The performance of photodetectors based on monolayer transition-metal dichalcogenides (TMDCs) varies greatly, even for the same type of devices made of the same material. Here, we compared the performance of phototransistors based on monolayer MoS 2 grown by chemical vapor deposition (CVD) with different seeding promoters of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS), copper phthalocyanine (CuPc), and crystal violet, respectively. The device based on MoS 2 grown with PTAS has the highest photoresponsivity. This work implies the selection of seeding promoters during the CVD growth of monolayer TMDCs will affect the photodetectors characteristics, which is very important to their applications in optoelectronics.

中文翻译：

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化学气相沉积不同种子促进剂生长的单层二硫化钼的光响应性

即使对于由相同材料制成的相同类型的设备，基于单层过渡金属二卤化金属（TMDC）的光电探测器的性能也有很大差异。在这里，我们比较了通过化学气相沉积（CVD）生长的单层MoS 2和不同per型3,4,9,10-四羧酸四钾盐（PTAS），酞菁铜（CuPc）的种晶促进剂的光电晶体管的性能，和水晶紫。基于PTAS生长的基于MoS 2的设备具有最高的光响应性。这项工作意味着在单层TMDC的CVD生长过程中选择晶种促进剂将影响光电探测器的特性，这对于它们在光电领域的应用非常重要。