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Improved method for determining crystallographic orientation of strained graphene by Raman spectroscopy
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-06-23 , DOI: 10.35848/1882-0786/ab9d0e
Hikari Tomori 1, 2 , Kazushi Nakamura 1 , Akinobu Kanda 1
Affiliation  

Strain-induced phenomena in graphene strongly depend on the strain direction with respect to the crystallographic orientation of graphene. The conventional method for determining the strain direction in graphene uses the polarized Raman spectroscopy of the G band and needs accurate alignment of the polarizer angle, which is not easy in a conventional Raman microscope equipped with a simple sample stage, and leads to an error in the strain direction. Here we develop a method of obtaining both the strain direction and the polarizer angle simultaneously from the polarized Raman spectroscopy of the G and 2D bands.

中文翻译:

拉曼光谱法测定应变石墨烯晶体取向的改进方法

石墨烯中的应变诱发现象在很大程度上取决于相对于石墨烯的晶体学取向的应变方向。用于确定石墨烯中应变方向的常规方法使用G带的偏振拉曼光谱,并且需要偏振器角度的精确对准,这在配备了简单样品台的常规拉曼显微镜中不容易,并且会导致误差。应变方向。在这里,我们开发了一种从G和2D波段的偏振拉曼光谱同时获得应变方向和偏振器角度的方法。
更新日期:2020-06-24
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