Processes Controlling the Distribution of Vertical Organic Composition in Organic Photodetectors by Ultrasonic-Assisted Solvent Vapor Annealing,ACS Applied Electronic Materials

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Processes Controlling the Distribution of Vertical Organic Composition in Organic Photodetectors by Ultrasonic-Assisted Solvent Vapor Annealing
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-24 , DOI: 10.1021/acsaelm.0c00378
Dayong Zhang ₁ , Dan Zhao ₁ , Zijun Wang ₁ , Junsheng Yu ₁

Affiliation

Regulating the vertical composition distribution of an organic electronic donor and acceptor is an effective strategy for the fabrication of high-performance organic photodetectors (OPDs). In this study, after the one-step solution process to fabricate an active layer, an ultrasonic-assisted solvent vapor annealing method (UA-SVA) was proposed to modulate the vertical distribution of the PBDB-T:ITIC BHJ layer in an OPD device. Compared to the control device processed from SVA, the obtained OPD from UA-SVA exhibits both a decreased dark current and slightly enhanced photocurrent. As a result, the photodetectivity of the device treated by UA-SVA was more than one order of magnitude higher than that of the control counterpart in the detective spectrum ranging from 450 to 750 nm. Especially, a dramatically high photodetectivity of 2.17 × 10¹² Jones at a wavelength of 688 nm has been achieved under a reverse bias of −0.5 V. To illuminate the reason for OPD performance improvement, ultraviolet–visible (UV–vis) absorption spectroscopy, space-charge-limited current (SCLC) method, atomic force microscopy (AFM), and water contact angle (WCA) measurement were performed, and the enhanced light-absorption intensity, improved charge carrier transport efficiency, and the modified interfacial contact and surface morphology of the BHJ active layer were observed.

中文翻译：

超声辅助溶剂蒸汽退火控制有机光电探测器中垂直有机成分分布的方法

调节有机电子供体和受体的垂直组成分布是制造高性能有机光电探测器（OPD）的有效策略。在这项研究中，在一步法固溶过程中制造了有源层之后，提出了一种超声辅助溶剂蒸汽退火方法（UA-SVA）来调节OPD器件中PBDB-T：ITIC BHJ层的垂直分布。与从SVA处理的控制设备相比，从UA-SVA获得的OPD既显示出降低的暗电流，又显示出稍微增强的光电流。结果，在450至750 nm的检测光谱范围内，经UA-SVA处理的设备的光检测率比对照对应物高一个数量级。尤其是2.17×10的极高光电探测率在-0.5 V的反向偏压下，获得了688 nm波长下的¹² Jones。为阐明OPD性能提高的原因，使用了紫外可见（UV-vis）吸收光谱，空间电荷限制电流（SCLC）方法进行了原子力显微镜（AFM）和水接触角（WCA）测量，观察到BHJ活性层的光吸收强度提高，电荷载流子传输效率提高，界面接触和表面形态得到改善。

更新日期：2020-07-28

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