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Perovskite nanowire lasers on low-refractive-index conductive substrate for high-Q and low-threshold operation
Nanophotonics ( IF 6.5 ) Pub Date : 2020-06-24 , DOI: 10.1515/nanoph-2020-0207
Daria I. Markina 1 , Anatoly P. Pushkarev 1 , Ivan I. Shishkin 1 , Filipp E. Komissarenko 1 , Alexander S. Berestennikov 1 , Alexey S. Pavluchenko 2 , Irina P. Smirnova 2 , Lev K. Markov 2 , Mikas Vengris 3 , Anvar A. Zakhidov 1, 4 , Sergey V. Makarov 1
Affiliation  

Abstract Over the last five years, inorganic lead halide perovskite nanowires have emerged as prospective candidates to supersede standard semiconductor analogs in advanced photonic designs and optoelectronic devices. In particular, CsPbX3 (X = Cl, Br, I) perovskite materials have great advantages over conventional semiconductors such as defect tolerance, highly efficient luminescence, and the ability to form regularly shaped nano- and microcavities from solution via fast crystallization. However, on the way of electrically pumped lasing, the perovskite nanowires grown on transparent conductive substrates usually suffer from strong undesirable light leakage increasing their threshold of lasing. Here, we report on the integration of CsPbBr3 nanowires with nanostructured indium tin oxide substrates possessing near-unity effective refractive index and high conductivity by using a simple wet chemical approach. Surface passivation of the substrates is found out to govern the regularity of the perovskite resonators’ shape. The nanowires show room-temperature lasing with ultrahigh quality factors (up to 7860) which are up to four times higher than that of similar structures on a flat indium tin oxide layer, resulting in more than twofold reduction of the lasing threshold for the nanostructured substrate. Numerical modeling of eigenmodes of the nanowires confirms the key role of low-refractive-index substrate for improved light confinement in the Fabry–Pérot cavity which results in superior laser performance.

中文翻译:

用于高 Q 和低阈值操作的低折射率导电衬底上的钙钛矿纳米线激光器

摘要 在过去五年中,无机卤化铅钙钛矿纳米线已成为在先进光子设计和光电器件中取代标准半导体类似物的潜在候选材料。特别是,CsPbX3 (X = Cl, Br, I) 钙钛矿材料与传统半导体相比具有很大的优势,例如缺陷耐受性、高效发光以及通过快速结晶从溶液中形成规则形状的纳米和微腔的能力。然而,在电泵激激光的过程中,生长在透明导电基板上的钙钛矿纳米线通常会遭受强烈的不希望有的漏光,从而增加了它们的激光阈值。这里,我们报告了通过使用简单的湿化学方法将 CsPbBr3 纳米线与具有接近统一的有效折射率和高电导率的纳米结构氧化铟锡基材的集成。发现基板的表面钝化控制钙钛矿谐振器形状的规律性。纳米线显示具有超高品质因数(高达 7860)的室温激光,比平坦氧化铟锡层上的类似结构高四倍,导致纳米结构基板的激光阈值降低两倍以上. 纳米线本征模式的数值模拟证实了低折射率基板在改善法布里-珀罗腔中的光限制方面的关键作用,从而产生了卓越的激光性能。
更新日期:2020-06-24
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